ZnGeP2 (Zinc germanium phosphide, ZGP) According to Sadao Adachi J. Appl.

Bi4Ti3O12 (Bismuth titanate, BTO) Tl3AsSe3 (Thallium arsenic selenide, TAS) Refractive index of AlAs, J. Appl. Ne (Neon)

Wavelength, µm n, k 0.3 0.4 0.5 0.6 0.7 0.8 0 1 2 3 4 5 6 RefractiveIndex.INFO AlAs-GaAs (Aluminium gallium arsenide, AlGaAs) Aspnes et al. Ar (Argon) Se (Selenium)

TiC (Titanium carbide) LiIO3 (Lithium iodate)

OTHER - miscellaneous materials

AgBr (Silver bromide) CdGeAs2 (Cadmium germanium arsenide) GaP (Gallium phosphide) From the data the thermal dependencies of the indices of refraction of GaAs and AlAs for wavelengths near 1 μm were determined to be (2.67±0.07)×10 −4 /°C and (1.43±0.07)×10 −4 /°C, respectively. AgGaSe2 (Silver gallium selenide, AGSe) YVO4 (Yttrium orthovanadate) KTiOPO4 (Potassium titanyl phosphate, KTP) LiI (Lithium iodide) TlBr (Thallium bromide) (or is it just me...), Smithsonian Privacy LiF (Lithium fluoride) PbMoO4 (Lead Molybdate) Al (Aluminium)

By using this site, you agree to our updated Privacy Policy and our Cookie Policy. Na (Sodium) KTaO3 (Potassium tantalate) Al2O3 (Aluminium sesquioxide, Sapphire, Alumina) It is semiconductor material. W (Tungsten) InAs (Indium arsenide) Zr (Zirconium), Page CO (Carbon monoxide) InP (Indium phosphide)

Shelf Be (Beryllium) Er (Erbium) Sr (Strontium)

CsCl (Cesium chloride) CuGaS2 (Copper gallium sulfide) Am. 58, No.3, (1985) R1 the real part of the refractive index n of a zinkblende material below the direct band gap edge can be expressed due to a simplified interband-transition model as: Cs (Caesium)

PbI2 (Lead iodide)

[TXT - tab separated] ZnSe (Zinc selenide) "Request". CsBr (Cesium bromide) Rb (Rubidium) CaWO4 (Calcium tungstate) M. Cardona, K. L. Shaklee, and F. H. Pollak, Phys. According to Sadao Adachi J. Appl. LiB3O5 (Lithium triborate, LBO) Chromium (Cr) KI (Potassium iodide) LaF3 (Lanthanum fluoride) In this way we obtained the interband critical-point parameters and their temperature dependence. Pd (Palladium) Li (Lithium) Hg (Mercury) GaS (Gallium sulfide) Os (Osmium) Ge (Germanium) CuI: exciton energies, spin-orbit splitting, exciton effective masses, L-T-splitting, damping consta... InSb: dielectric constant, Raman coupling coefficient, BN: Grüneisen parameters, effective charges, dielectric constants, An optical study of a-Ge20Se80−xInx thin films in sub-band gap region, AlP: effective charge, dielectric constant, Raman coupling coefficient, Zinc silicon phosphide (ZnSiP2) refractive index, dielectric constants, Collaboration: Authors and editors of the volumes. Tm (Thulium) Pb5Ge3O11 (Lead germanate, PGO) Yb (Ytterbium) In (Indium) For a typical sample of AlAs the refractive index and extinction coefficient at 632.8 nm are 3.13131 and 0. PbS (Lead sulfide) ZrO2 (Zirconium dioxide, Zirconia) AlN (Aluminium nitride) PCA 61, 157 (1987) (UV data) and S. Adachi, J. Appl. D2 (Deuterium) Mg (Magnesium) Submit your application to win an all-inclusive 11-days at Sao Paulo School of Advanced Sciences on... InP: mode-Grüneisen parameters, effective charge, dielectric constant, GaN: effective charge, dielectric constants, AlAs: effective charge, dielectric constant, Raman coupling coefficients. AlAs: dielectric constant, refractive index. We discuss the limitations of this simple approach, and in particular that the same improvement cannot be found for the whole spectral range including the valence plasmons and bound excitons. MAIN - simple inorganic materials SrF2 (Strontium fluoride)

HfO2 (Hafnium dioxide, Hafnia) RbF (Rubidium fluoride) TlCl (Thallium chloride)

AlAs is found to undergo a structural phase transition from ZnS type to NiAs type at 6.68 GPa, in good agreement with the experimental value of 7±5 GPa. Ag3AsS3 (Silver arsenic sulfide) ORGANIC - organic materials at 632.8 nm are Re (Rhenium) Ho (Holmium) WS2 (Tungsten disulfide) The cap was then removed by heating the sample. TeO2 (Tellurium dioxide) Wavelength: µm (2.0664e-01 – 1.2398e+01) Complex refractive index (n+ik) = = n k LogX LogY eV Derived optical constants = = = = = = = = Comments. CaSO4 (Calcium sulfate) GaAs | and extinction coefficient Ru (Ruthenium) Vol.

CdTe (Cadmium telluride)

Magnetic Semiconductors' of Volume 44 'Semiconductors' of Sellmeyer equation.

ThF4 (Thorium tetrafluoride) BiB3O6 (Bismuth triborate, BiBO)

Bi (Bismuth) SF6 (Sulphur hexafluoride) Letters. TiO2 (Titanium dioxide) RbCl (Rubidium chloride) Landolt-Börnstein - Group III 'Condensed Matter'. CeF3 (Cerium trifluoride) KH2PO4 (Potassium dihydrogen phosphate, KDP) After growth the layer was covered by an As cap layer for protection during transfer to our ultrahigh vacuum measurement chamber. NaI (Sodium iodide)

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Ca (Calcium) The dispersion parameters are calculated by using the Wemple–DiDomenico model. MgO (Magnesium monoxide) It contains data on AlAs (aluminum arsenide), Element System Al-As. Sc (Scandium) PbTe (Lead telluride) The, This document is part of Subvolume D 'New Data and Updates for IV-IV; III-V; II-VI and I-VII Compounds; their Mixed Crystals and Diluted Magnetic Semiconductors' of Volume 44 'Semiconductors' of Landolt-Börnstein - Group III 'Condensed Matter'. Soc. To sign up for alerts, please log in first. FAQs. Phys. ZnSiAs2 (Zinc silicon arsenide) The ADS is operated by the Smithsonian Astrophysical Observatory under NASA Cooperative +1 858-573-9300 Article copyright remains as specified within the article. We discuss the effects of a static long-range contribution -α/q2 to the exchange-correlation kernel fxc(q) of time-dependent density functional theory.


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